冯敏强教授、谢跃民副教授及其合作者在Adv. Energy Mater.上发表论文

题目：

All-Inorganic Perovskite-Based Monolithic Perovskite/Organic Tandem Solar Cells with 23.21% Efficiency by Dual-Interface Engineering

作者：

Shuang-Qiao Sun^1#, Xiuwen Xu^2#, Qi Sun^1#, Qin Yao³, Yating Cai⁴, Xin-Yi Li¹, Yan-Lin Xu¹, Wei He¹, Min Zhu¹, Xuan Lv¹, Francis R. Lin⁵, Alex K.-Y. Jen⁵, Tingting Shi⁴*, Hin-Lap Yip³*, Man-Keung Fung¹*and Yue-Min Xie¹*

单位：

¹Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, 215123, Jiangsu, PR China.

²College of Electronic and Optical Engineering, and College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing 210023, P. R. China.

³Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, P. R. China.

⁴Siyuan Laboratory, Guangdong Provincial Engineering Technology Research, Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, Guangdong 510632, P. R. China.

⁵Department of Chemistry, City University of Hong Kong, Kowloon 999078, Hong Kong.

摘要：

Monolithic perovskite/organic tandem solar cells (POTSCs) have significant advantages in next-generation flexible photovoltaics, owing to their capability to overcome the Shockley-Queisser limit and facile device integration. However, the compromised sub-cells performance challenges the fabrication of high-efficiency POTSCs. Especially for all-inorganic wide-bandgap perovskite front sub-cells (AIWPSCs) based n-i-p structured POTSCs (AIPOTSCs), for which the power conversion efficiency (PCE) is much lower than organic-inorganic mixed-halide wide-bandgap perovskite based POTSCs. Herein, an ionic liquid, methylammonium formate (MAFm), based dual-interface engineering approach is developed to modify the bottom and top interfaces of wide-bandgap CsPbI2Br films. In particular, the Fm^- group of MAFm can effectively passivate the interface defects, and the top interface modification can facilitate the formation of uniform perovskite films with enlarged grain size, thereby mitigating the defects and perovskite grain boundaries induced carrier recombination. As a result, CsPbI2Br-based AIWPSCs with a high PCE of 17.0% and open-circuit voltage (VOC) of 1.347 V are achieved. By integrating these dual-interface engineered CsPbI2Br-based front sub-cells with the narrow-bandgap PM6:CH1007-based rear sub-cells, a record PCE of 23.21% is obtained for AIPOTSCs, illustrating the potential of AIPOTSCs for achieving high-efficiency tandem solar cells.

影响因子：

29.698

分区情况：

一区

链接：

https://doi.org/10.1002/aenm.202204347