Band-Aligned Polymeric Hole Transport Materials for Extremely Low Energy Loss ɑ-CsPbI3 Perovskite Nanocrystal Solar Cells
Jianyu Yuan,1 Xufeng Ling,1 Di Yang,1 Fangchao Li,1 Sijie Zhou,1 Junwei Shi,1 Yuli Qian,1 Jiaxin Hu,1 YuanShengSun,2 Yingguo Yang,3 Xingyu Gao,3 Steffen Duhm,1 Qiao Zhang1,* and Wanli Ma1,4,*
1Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199Ren-Ai Road, Suzhou Industrial Park, Suzhou, Jiangsu 215123, P.R. China
2ISS, Inc., Newton Drive, Champaign, IL 61822, USA.
3Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201204, P.R. China.
Emerging all-inorganic perovskite nanocrystals can retain a desired crystalstructure under ambient conditions and offer easy solution processability. In this work, we have demonstrated CsPbI3 perovskite quantum dot (QD) solar cells with a remarkable efficiency approaching 13% and an extremely low energy loss of 0.45 eV by employing a series of dopant-free polymeric hole-transporting materials (HTMs). The CsPbI3 QD solar cells use polymer HTMs to achieve efficient charge extraction at QD/polymer interfaces and avoid device instability caused by complex doping and oxidation processes required by conventional Spiro-OMeTAD. Meanwhile, the CsPbI3 QD photovoltaic devices can be fabricated at room temperature and exhibit more reproducible film quality,showing potential advantages over current all-inorganic thin-film perovskite solar cells. We believe that our findings will catalyze the development of new device structures, specifically for perovskite QDs, and help realize the promising potential of all-inorganic perovskite solar cells.