马万里教授、袁建宇副研究员在Angew. Chem. Int. Ed.上发表论文

发布时间:2020-09-27访问量:143设置

题目:

In-situ ligand bonding management of CsPbI3 perovskite quantum dots enables high-performance photovoltaics and red light-emitting diodes

作者:

Junwei Shi1, Fangchao Li1, Yan Jin1, Cheng Liu1, Ben Cohen-Kleinstein2, Shuai Yuan1, Youyong Li1,   Zhao-Kui Wang1, Jianyu Yuan1,* Wanli Ma1*

单位:

1Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren-Ai Road, Suzhou Industrial Park, Suzhou, Jiangsu 215123, P. R. China

2Waterloo Institute of Nanotechnology Engineering, University of Waterloo, Waterloo, ON, Canada N2L 3G1

摘要:

Lead halide perovskite quantum dots (QDs) are promising materials for the next generation optoelectronic devices. Importantly, the bonding nature of QD capping ligands plays a crucial role in the resultant device performance. To fine-tuning the surface ligand towards high-performance devices, we first developed an in-situ passivation process for all-inorganic cesium lead iodide (CsPbI3) perovskite QDs by using a bi-functional ligand, namely L-phenylalanine (L-PHE). Through the addition of this ligand into the precursor solution during synthesis, the in-situ treated CsPbI3 QDs display significantly reduced surface states, increased vacancy formation energy, higher photoluminescence quantum yields, and much improved stability. Consequently, the L-PHE passivated CsPbI3   QDs enabled us to realize QD solar cells with an optimal efficiency of 14.62% and red light-emitting diodes (LEDs) with a highest external quantum efficiency (EQE) of 10.21%, respectively, demonstrating the great potential of ligand bonding management in improving the optoelectronic properties of solution-processed perovskite QDs.

影响因子:

12.257

分区情况:

一区

链接:

https://doi.org/10.1002/anie.202010440


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