报告题目：High efficiency silicon heterojunction solar cells featuring passivated contacts
报告时间：12月10日下午14:00（周四）
报告地点：909-B厅
报告摘要：
The world photovoltaic (PV) market is dominated by the crystalline silicon (c-Si) solar cells based on the diffused p-n junction, and their efficiency is mainly limited by the high carrier recombination loss at the metal-silicon contact regions. To push the efficiency close to the Shockley-Queisser limit (29.4%), advanced passivating contacts, which simultaneously suppress recombination and promote charge-carrier selectivity, are a promising next step for PV industry. In this talk, we will present the latest results on c-Si solar cells featuring two different passivating contact technologies, the dopant free passivating contact and the doped amorphous silicon (a-Si:H) based passivating contact. With the dopant-free passivating contact based on metal oxides or nitrides, which are deposited by either atomic layer deposition or sputtering, a high efficiency of 22.3% is achieved on c-Si solar cells with a low processing complexity. A certificated high efficiency of 24.1% is achieved on the c-Si solar cells with the doped a-Si:H based passivating contact. With the high efficiency c-Si solar cells featuring passivating contacts, perovskite/silicon tandem solar cells with a high efficiency of 26.2% is achieved.
个人简介：
杨新波，苏州大学能源学院教授。2010年毕业于中国科学院上海硅酸盐研究所，获工学博士学位。2010年4月至2020年10月先后在日本东北大学金属材料研究所、澳大利亚国立大学可再生能源研究中心和沙特阿卜杜拉国王科技大学太阳能中心从事太阳能电池材料与器件的研究工作。在材料、能源和物理领域国际期刊发表SCI论文60余篇，在光伏权威会议做口头报告11次，授权发明专利5项。澳大利亚科学委员会探索项目和荷兰科学研究组织青年项目特邀评审专家, 2018年第7届全球光伏大学分会场主席；先后获得了两项颇具威望的荣誉研究员称号（日本学术振兴会特别研究员JSPS Fellow和澳大利亚可再生能源局特聘研究员ARENA Fellow），作为项目负责人或研究骨干，主持/参与6项目光伏技术领域的核心项目，合计经费超过1千万美元。
联系人：孙宝全