揭建胜教授课题组和张晓宏教授课题组合作在Nature Communications上发表论文

发布时间:2019-03-22访问量:10设置

题目:

Memory Phototransistors based on Exponential-Association Photoelectric Conversion Law

作者:

Zhibin Shao1, Tianhao Jiang1, Xiujuan Zhang1, Xiaohong Zhang1*, Xiaofeng Wu1, Feifei Xia2, Shiyun Xiong1, Shuit-Tong Lee1* & Jiansheng Jie1*

单位:

1Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, P. R. China.

2School of Chemical and Environmental Engineering, Jiangsu University of Technology, Changzhou,   Jiangsu, 213001, P. R. China.

摘要:

Ultraweak light detectors have wide-ranging important applications such as astronomical observation, remote sensing, laser ranging, and night vision. Current commercial ultraweak light detectors are commonly based on a photomultiplier tube or an avalanche photodiode, and they are incompatible with microelectronic devices for digital imaging applications, because of their high operating voltage and bulky size. Herein, we develop a memory phototransistor   for ultraweak light detection, by exploiting the charge-storage accumulative effect   in CdS nanoribbon. The memory phototransistors break the power law of traditional photodetectors and follow a time-dependent exponential-association photoelectric conversion law. Significantly, the   memory phototransistors exhibit ultrahigh responsivity of 3.8 × 109   A W−1 and detectivity of 7.7 × 1022 Jones. As a result,   the memory phototransistors are able to detect ultraweak light of 6 nW cm−2   with an extremely high sensitivity of 4 × 107. The proposed memory phototransistors offer a design concept for ultraweak light sensing devices.

影响因子:

12.353

分区情况:

二区

链接:

https://www.nature.com/articles/s41467-019-09206-w

  

责任编辑:向丹婷

返回原图
/