题目： | A General Solvent Selection Strategy for Solution Processed Quantum Dots Targeting High Performance Light-Emitting Diode |
作者： | Yatao Zou, Muyang Ban, Wei Cui, Qi Huang, Chen Wu, Jiawei Liu, Haihua Wu, Tao Song,* and Baoquan Sun* |
单位： | Institute of Functional Nano & Soft Materials (FUNSOM) and Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, 199 Ren’ai Road, Suzhou 215123, P. R. China |
摘要： | An all-solution-processed quantum dots (QDs) light emitting diode (QLED) consists of different layers deposited from various orthogonal solvents. Here,the authors develop a general solvent selection strategy to obtain orthogonalsolubility properties as well as high film quality. It is found that a “poor” QDsfilm morphology with striation defects often occurs when the QDs film isdeposited from “bad” solvent. A physical model is presented to rationalizethe observed striation defects, and then a general solvent selection strategyis proposed to prevent both surface striation defects and the dissolving ofthe underlying layers by carefully choosing the “good” solvent for QDs. Acompact QDs film can be fabricated without altering the original morphologyof underlying functional layers in a QLED device, leading to significant deviceperformance improvement. An external quantum efficiency of 15.45% isachieved in a green QLED with uniform emitting region. This solvent selectionstrategy provides a general way to deposit high quality films for most ofthe solution-processed multilayer optoelectronic devices. |
影响因子： | 11.382 |
分区情况： | 1区 |
链接： | http://onlinelibrary.wiley.com/doi/10.1002/adfm.201603325/full |
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