题目： | Coexistence of Grain-Boundaries-Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride |
作者： | Chengbin Pan1, Yanfeng Ji1, Na Xiao1, Fei Hui2, Kechao Tang3, Yuzheng Guo4, Xiaoming Xie5, Francesco M. Puglisi6, Luca Larcher6, Enrique Miranda7, Lanlan Jiang1, Yuanyuan Shi1, Ilia Valov8, Paul C. McIntyre3, Rainer Waser 8and Mario Lanza1,* |
单位： | 1Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, 199 Ren-AiRoad, Suzhou 215123, China 2Department of Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology , Cambridge, MA, USA 3Department of Materials Science and Engineering, Stanford University, CA , 94305 , USA 4Rowland Institute Harvard University, Cambridge, MA, USA 5State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China 6DISMI, Università di Modena e Reggio Emilia, Reggio Emilia, Italy 7Electronic Engineering Department, Universitat Autonoma de Barcelona, Cerdanyola del Vallés, Spain. 8Forschungszentrum Jülich GmbH, Jülich, Germany |
摘要： | The use of 2D materials to improve the capabilities of electronic devices is a promising strategy that has recently gained much interest in both academia and industry. However, while the research in 2D metallic and semiconducting materials is well established, detailed knowledge and applications of 2D insu-lators are still scarce. In this paper, the presence of resistive switching (RS) in multilayer hexagonal boron nitride (h-BN) is studied using different electrode materials, and a family of h-BN-based resistive random access memories with tunable capabilities is engineered. The devices show the coexistence of forming free bipolar and threshold-type RS with low operation voltages down to 0.4 V, high current on/off ratio up to 106, and long retention times above 10 h, as well as low variability. The RS is driven by the grain boundaries (GBs) in the polycrystalline h-BN stack, which allow the penetration of metallic ions from adjacent electrodes. This reaction can be boosted by the generation of B vacancies, which are more abundant at the GBs. To the best of our knowledge, h-BN is the first 2D material showing the coexistence of bipolar and threshold RS, which may open the door to additional functionalities and applications. |
影响因子： | 11.382 |
分区情况： | 1区 |
链接： | http://onlinelibrary.wiley.com/doi/10.1002/adfm.201604811/epdf |
责任编辑：向丹婷