Mario Lanza教授课题组在Advanced Functional Materials上发表论文



Resistive Random Access Memory Cells with a Bilayer TiO2/SiOX Insulating Stack for Simultaneous Filamentary and Distributed Resistive Switching


Na Xiao1, Marco A. Villena1, Bin Yuan1, Shaochuan Chen1, Bingru Wang1, Marek Eliáš2, Yuanyuan Shi1,3,   Fei Hui1,4, Xu Jing1, Andrew Scheuerman5,   Kechao Tang5, Paul C. McIntyre5 and Mario Lanza1,**


1Institute of Functional Nano & Soft Materials (FUNSOM), Collaborative Innovation Center of Suzhou Nano Science &Technology, Soochow University, 199 Ren-AiRoad, Suzhou 215123, China

2CEITEC BUT, Bron University of Technology, Brno 61669, Czech Republic

3Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA

4Department of Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, MA 02139, USA

5Department of Materials Science and Engineering, Stanford University, CA 94305, USA


In order to fulfill the information storage needs of modern societies, the performance of electronic nonvolatile memories (NVMs) should be continuously improved. In the past few years, resistive random access memories (RRAM) have raised as one of the most promising technologies for future information storage due to their excellent performance and easy fabrication. In this work, a novel strategy is presented to further extend the performance of RRAMs. By using only cheap and industry friendly materials (Ti, TiO2, SiOX, and n++Si), memory cells are developed that show both filamentary and distributed resistive switching simultaneously (i.e., in the same I–V curve). The devices exhibit unprecedented hysteretic I–V characteristics, high current on/off   ratios up to≈5 orders of magnitude, ultra low currents in high resistive   state and low resistive state (100 pA and 125 nA at –0.1 V, respectively), sharp switching transitions, good cycle-to-cycle endurance (>1000 cycles), and low device-to-device variability. We are not aware of any other resistive switching memory exhibiting such characteristics, which may open the door for the development of advanced NVMs combining the advantages of filamentary and distributed resistive switching mechanisms.