Title： | Facile Assembly of High-quality Organic-Inorganic Hybrid Perovskite Quantum Dot Thin Films for Bright Light-Emitting Diodes |
Authors： | Xiangcheng Jin, Xiujuan Zhang*, Huan Fang, Wei Deng, Xiuzhen Xu, Jiansheng Jie*, Xiaohong Zhang* |
Institutions： | Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu 215123, P. R. China |
Abstract： | Organic-inorganic hybrid perovskite (CH3NH3PbX3, X = Cl, Br or I) quantum dots (QDs) have shown superior optoelectronic properties and have been regarded as a most ideal material for next-generation optoelectronic devices, particularly for QDs-based light-emitting diodes (QLEDs). However, there are only a few reports on CH3NH3PbX3 QLEDs and the reported performance is still very poor, primarily due to the difficulties in the fabrication of high-quality compact QDs thin films. In this work, an electric-field-assisted strategy is developed for efficient fabrication of uniform CH3NH3PbBr3 QDs thin films with high photoluminescence quantum yields (PLQY, 80%–90%) from dilute CH3NH3PbBr3 QDs suspensions (≈0.1 mg mL-1) within 5 mins. Benefited from the high-quality CH3NH3PbBr3 QDs thin films, the corresponding QLEDs deliver a highly bright green emission with maximum luminances of 12450 cd m2. Furthermore, a current efficiency of 12.7 cd A-1, a power efficiency of 9.7 lm W-1, and an external quantum efficiency (EQE) of 3.2% were acheived by enhancing the hole injection. This performance represents the best results for CH3NH3PbBr3 QDs-based QLEDs reported to date. These results indicate an important progress in the fabrication of high-performance CH3NH3PbX3 QLEDs and demonstrate their huge potential for nextgeneration displays and lighting. |
IF： | 12.124 |
Link： | http://onlinelibrary.wiley.com/doi/10.1002/adfm.201705189/abstract
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Editor: Danting Xiang