Martin Stutzmann

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Martin Stutzmann


Professor

Technical University of MunichTUM


Details



Publication:

(1)M. Stutzmann, J. A. Garrido, M. Eickhoff, and M. S. Brandt, “Direct biofunctionalization of semiconductors: a survey”, phys. sat. sol. (a) 203, 3424 (2006)

(2)A. R. Stegner, R. N. Pereira, K. Klein, R. Lechner, R. Dietmüller, M. S. Brandt, and M. Stutzmann, “Electronic transport in phosphorus-doped silicon nanocrystal networks”,Phys. Rev. Lett. 100, 026803 (2008)

(3)J. Howgate, S. Schoell, M. Hoeb, W. Steins, B. Baur, S. Hertrich, B. Nickel, I. D. Sharp, M. Stutzmannand M. Eickhoff, “Photocatalytic cleavage of self-assembled organic monolayers by UV-induced charge transfer from GaN substrates”, Adv. Mater. 22, 2632 (2010)

(4)S. Niesar, R. N. Pereira, A. R. Stegner, N. Erhard, M. Hoeb, A. Baumer, H. Wiggers, M. S. Brandt, and M. Stutzmann, “Low-cost post-growth treatments of crystalline silicon nanoparticles improving surface and electronic properties”, Adv. Funct. Mat. 22, 1190 (2012)

(5)F. Schuster, F. Furtmayr, R. Zamani, C. Magén, J. R. Morante, J. Arbiol, J. A. Garrido, and M. Stutzmann, “Self-Assembled GaN Nanowires on Diamond” Nano Lett. 12, 2199 (2012)

(6)S. Schäfer, S. A. Wyrzgol, R. Caterino, A. Jentys, S. J. Schoell, M. Hävecker, A. Knop-Gericke, J. A. Lercher, I. D. Sharp and M. Stutzmann, “Platinum Nanoparticles on Gallium Nitride Surfaces: Effect of Semiconductor Doping on Nanoparticle Reactivity”, J. Am. Chem. Soc. 134, 12528 (2012)

(7)W. Aigner, S. Niesar, E. Mehmedovic, M. Opel, F. E. Wagner, H. Wiggers, and M. Stutzmann, “Separation of semiconducting and ferromagnetic FeSi2-nanoparticles by magnetic filtering”, J. Appl. Phys. 114, 134308 (2013)

(8)F. Schuster, B. Laumer, R. R. Zamani, C. Magén, J. R. Morante, J. Arbiol and M. Stutzmann, “p-GaN/n-ZnO Heterojunction Nanowires: Optoelectronic Properties and the Role of Interface Polarity”, ACS Nano 8, 4376 (2014)

(9)A. Winnerl, R. N. Pereira, and M. Stutzmann, “Kinetics of optically excited charge carriers at the GaN surface: Influence of catalytic Pt nanostructures”, J. Appl. Phys. 118, 155704 (2015)

(10)M.Hetzl, M. Kraut, J. Winnerl,  L.Francaviglia, M. Doeblinger, S. Matich, A Fontcuberta i Morral, M. Stutzmann, “Strain-Induced Band Gap Engineering in Selectively Grown GaN-(Al,Ga)N Core-Shell Nanowire Heterostructures”, Nano Lett. 16, 7098 (2016)


Editor: Jian Wei

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