Adv. Funct. Mater.: Resistive Random Access Memory Cells with a Bilayer TiO2/SiOX Insulating Stack for Simultaneous Filamentary and Distributed Resistive Switching

Title：

Resistive Random Access Memory Cells with a Bilayer TiO₂/SiO_X Insulating Stack for Simultaneous Filamentary and Distributed Resistive Switching

Authors：

Na Xiao¹, Marco A. Villena¹, Bin Yuan¹, Shaochuan Chen¹, Bingru Wang¹, Marek Eliáš², Yuanyuan Shi^1,3,   Fei Hui^1,4, Xu Jing¹, Andrew Scheuerman⁵,   Kechao Tang⁵, Paul C. McIntyre⁵ and Mario Lanza^1,**

Institutions：

¹Institute of Functional Nano & Soft Materials (FUNSOM), Collaborative Innovation Center of Suzhou Nano Science &Technology, Soochow University, 199 Ren-AiRoad, Suzhou 215123, China

²CEITEC BUT, Bron University of Technology, Brno 61669, Czech Republic

³Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA

⁴Department of Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, MA 02139, USA

⁵Department of Materials Science and Engineering, Stanford University, CA 94305, USA

Abstract：

In order to fulfill the information storage needs of modern societies, the performance of electronic nonvolatile memories (NVMs) should be continuously improved. In the past few years, resistive random access memories (RRAM) have raised as one of the most promising technologies for future information storage due to their excellent performance and easy fabrication. In this work, a novel strategy is presented to further extend the performance of RRAMs. By using only cheap and industry friendly materials (Ti, TiO₂, SiO_X, and n⁺⁺Si), memory cells are developed that show both filamentary and distributed resistive switching simultaneously (i.e., in the same I–V curve). The devices exhibit unprecedented hysteretic I–V characteristics, high current on/off   ratios up to≈5 orders of magnitude, ultra low currents in high resistive   state and low resistive state (100 pA and 125 nA at –0.1 V, respectively), sharp switching transitions, good cycle-to-cycle endurance (>1000 cycles), and low device-to-device variability. We are not aware of any other resistive switching memory exhibiting such characteristics, which may open the door for the development of advanced NVMs combining the advantages of filamentary and distributed resistive switching mechanisms.

IF：

12.124

Link：

http://onlinelibrary.wiley.com/doi/10.1002/adfm.201700384/abstract;jsessionid=6B00EAF6470178A818762C056E18B83F.f02t01

Editor: Danting Xiang