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题目:

Mechanism of Cs2CO3 as an n-type dopant in organic electron-transport film

 

 

 

作者:

Y. Cai,1 H. X. Wei,1 J. Li,1 Q. Y. Bao,1 X. Zhao,2 S. T. Lee,3 Y. Q. Li,1,* and J. X. Tang1,*

 

 

单位:

1) Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou 215123, People’s Republic of China;

2) College of Chemistry and Biological Engineering, Suzhou University of Science and Technology, Suzhou 215011, People’s Republic of China;

3) Department of Physics and Materials Science, Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong, Hong Kong

 

 

摘要:

The electronic structures of cesium carbonate (Cs2CO3) doped 4,7-diphenyl-1,10-phenanthroline (Bphen) films with various doping concentration are characterized by in situ ultraviolet and x-ray photoelectron spectroscopies, in an attempt to understand the mechanism of electron-transport enhancement in Cs2CO3-doped organic electron-transport layer for organic optoelectronic devices. The n-type electrical doping effect is evidenced by the Fermi level shift in the Cs2CO3-doped Bphen films toward unoccupied molecular states with increasing doping concentration, leading to increase in electron concentration in the electron-transport layer and reduction in electron injection barrier height. These findings originate from energetically favorable electron transfer from Cs2CO3 to BPhen.

 

 

影响因子:

3.554

 

 

分区情况:

2


 

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