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题目:

Correlation between the electronic structures of transition metal oxide-based intermediate connectors and the device performance of tandem organic light-emitting devices

 

 

作者:

Qin-Ye Bao,a Jin-Peng Yang,a Yan Xiao,a Yan-Hong Deng,a Shuit-Tong Lee,b Yan-Qing Li*a and Jian-Xin Tang*a

 

 

单位:

a Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, 215123, China.

b Center Of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, China

 

 

摘要:

The impact of electronic structures on the functionality of transition metal oxide-based intermediate connectors for tandem organic light-emitting devices is investigated by studying the interfaces and the corresponding devices. For a typical transition metal oxide-based intermediate connector, consisting of a heterointerface between MoO3 and Mg-doped tris(8-quinolinolato)aluminum (Mg:Alq3), it is identified that MoO3 is essential to the charge generation and separation process, which occurs at the interface between MoO3 and the adjacent hole-transporting layer (HTL) via electron transfer from the highest occupied molecular orbital of the HTL into the conduction band of MoO3. In addition, the incorporation of a Mg:Alq3 layer is indispensable to the functionality of the intermediate connector, which not only facilitates the electron injection from MoO3 into the electron-transporting layer of the adjacent electroluminescent (EL) unit, but also blocks the leakage of holes across the intermediate connector into the HTL of the other adjacent EL unit.

 

 

影响因子:

5.099

 

 

分区情况:

1


 

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