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题目:

Electric-Field-Assisted Charge Generation and Separation Process in Transition Metal Oxide-Based Interconnectors for Tandem Organic Light-Emitting Diodes

 

 

作者:

Jin-Peng Yang ,a Yan Xiao ,a Yan-Hong Deng ,a Steffen Duhm ,b Nobuo Ueno ,b Shuit-Tong Lee ,c Yan-Qing Li ,a,* and Jian-Xin Tang a,*

 

 

单位:

a Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, China

b Graduate School of Advanced Integration Science Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan

c Center of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, China

 

 

摘要:

The charge generation and separation process in transition metal oxide (TMO)-based interconnectors for tandem organic light-emitting diodes (OLEDs) is explored using data on electrical and spectral emission properties, interface energetics, and capacitance characteristics. The TMO-based interconnector is composed of MoO3 and cesium azide (CsN3)-doped 4,7-diphenyl-1,10-phenanthroline (BPhen) layers, where CsN3 is employed to replace the reactive metals as an n-dopant due to its air stability and low deposition temperature. Experimental evidences identify that spontaneous electron transfer occurs in a vacuum-deposited MoO3 layer from various defect states to the conduction band via thermal diffusion. The external electric-field induces the charge separation through tunneling of generated electrons and holes from MoO3 into the neighboring CsN3-doped BPhen and hole-transporting layers, respectively. Moreover, the impacts of constituent materials on the functional effectiveness of TMO-based interconnectors and their influences on carrier recombination processes for light emission have also been addressed.

 

 

影响因子:

8.486

 

 

分区情况:

1


 

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