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题目:

The role of cesium fluoride as an n-type dopant on electron transport layer in organic light-emitting diodes

 

 

作者:

Huai-Xin Wei, Qing-Dong Ou, Zheng Zhang, Jian Li, Yan-Qing Li, * Shuit-Tong Lee, Jian-Xin Tang *

 

 

单位:

Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou 215123, China

 

 

摘要:

We report on the role of cesium fluoride (CsF) doping on the enhanced electron transport properties of tris-(8-hydroxyquinolin) aluminum (Alq3) for organic light-emitting diodes. The electronic structures of CsF-doped Alq3 layers with various doping concentration are characterized by in situ ultraviolet and X-ray photoelectron spectroscopies, showing an n-type electrical doping effect with Fermi level shift towards unoccupied molecular orbital and the formation of chemistry-induced gap-states. The increase in conductivity and reduction in electron injection barrier in CsF-doped Alq3 layer with optimal doping concentration lead to the enhanced electron injection and transport, which are consistent with the improved electrical characteristics of OLEDs.

 

 

影响因子:

4.047

 

 

分区情况:

1

 

 

链接:

http://www.sciencedirect.com/science/article/pii/S1566119913000177


 

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