报告人：Prof. Nobuo UENO (Chiba University and London Office of Japan Society for the Promotion of Science)
报告题目：Role of band gap states in organic semiconductors
- Tuning the charge injection barrier by using quasi-pinning effect of the Fermi level
报告时间：2016年12月8日（星期四）下午3：00
报告地点：909楼一楼B厅
摘要
Understanding origin and energy distribution of electronic states in HOMO-LUMO gap is indispensable to realize optoelectronic property of an organic device at its highest function. In this seminar we discuss very-high sensitivity UPS study coupled with theoretical computation on “invisible” gap states in organic semiconductors, which originate from the nature of molecular solids. We then discuss a method how to intentionally tune the Fermi level, namely the charge injection barrier height, using the “quasi Fermi-level pinning” effect. We demonstrate recent experimental evidences obtained with very-high sensitivity UPS.
简介
Prof. Nobuo Ueno
Director, London Office of Japan Society for the Promotion of Science (JSPS London)
Distinguished Professor and Professor Emeritus, Chiba University
Chair Professor, Soochow University
Councillor of the Futaba Electronics Memorial Foundation
联系人：唐建新 教授