题目： | High-Efficiency Deep Red Electroluminescence via a Spiro-Based Pure Hydrogen Carbon Host |
作者： | You-Jun Yu1,2#, Zhi-Hao Qu1,2#, Ling-Yi Ding1,2#, Xue-Qi Wang1,2, Xin-Yue Meng1,2, Meng-Tian Li1,2, Dong-Ying Zhou1,2, Zuo-Quan Jiang1,2*, Liang-Sheng Liao1,2,3* |
单位： | 1Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123, P. R. China. 2Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, P. R. China. 3Macao Institute of Materials Science and Engineering, Macau University of Science and Technology, Taipa, Macau SAR 999078, P. R.China. |
摘要： | Deep-red and near-infrared emitters with twisted donor–acceptor (D–A) structures often exhibit suboptimal performance in organic light-emitting diodes (OLEDs) due to constraints imposed by the energy gap law. In this work, a pure hydrogen carbon (PHC) host material named SBF-DTP is purposefully tailored for deep-red OLEDs. The excellent capacity of SBF-DTP to support D–A type DR emitters effectively arises from its distinctive attributes: localized excitation states, 3D configuration, and low polarity. When employing SBF-DTP as the host for the fluorescence emitter DCPA-TPA and the thermally activated delayed fluorescence emitter APDC-DTPA, doped films exhibit substantially enhanced photoluminescence quantum yields. This improvement leads to high-efficiency OLEDs with external quantum efficiencies of 5.47% for DCPA-TPA and 20.03% for APDC-DTPA, respectively, which is about twice as high as the initial reports. This findings underscore the paramount significance of developing efficient host materials in the pursuit of high-performance deep red and even near-infrared OLEDs. |
影响因子： | 18.5 |
分区情况： | 一区 |
链接： | https://doi.org/10.1002/adfm.202405491 责任编辑：杜欣 |