题目： | Enabling Ultra‐Narrow‐Band Deep‐Blue Light‐Emitting Diode Via Trapping Injected Holes by Carbon Dots |
作者： | Jian Shen1, Tianyang Zhang1, Jiacheng Li1, Zenan Li1, Haizhou Yu1, Weijie Yuan1, Hui Huang1, Yang Liu1*, and Zhenhui Kang1,2* |
单位： | 1Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, China. 2Macao Institute of Materials Science and Engineering (MIMSE), MUST−SUDA Joint Research Center for Advanced Functional Materials, Macau University of Science and Technology, Taipa, Macau 999078, China. |
摘要： | Narrow-band deep-blue light-emitting diodes (LEDs) (CIEy coordinate<0.08, full width at half maximum (FWHM)<20 nm) are important for the next generation of LED-based displays. It remains a significant challenge for the design of narrow-band deep-blue emitters. Herein, a new strategy is proposed for constructing narrow-band deep-blue LEDs that are not dependent on the narrow-band deep-blue emitter, but only need to dope n-type carbon dots (n-CDs) in the active emission layer (EML) of the wide-band blue LEDs. The n-CDs-LEDs show an ultra-narrow deep-blue emission at 430 nm with the color coordinates of (0.15, 0.04) and the FWHM of 19 nm. Wherein the EML is constructed by doping n-CDs in Poly(9,9-dioctylfluorene-co-N-(4-butylphenyl) diphenylamine) (TFB), which neither changes the band structure of TFB nor produces new energy levels. Transient photovoltage (TPV) and various photoelectrochemical characterizations jointly reveal that n-CDs can trap holes to realize the carrier injection into a single energy level of TFB and achieve ultra-narrow deep-blue light emission. This work provides a brand-new and simple way to realize the narrow-band deep-blue LEDs. |
影响因子： | 18.5 |
分区情况： | 一区 |
链接： | https://doi.org/10.1002/adfm.202408239 责任编辑：杜欣 |