张晓宏教授、张秀娟教授与邓巍副教授合作在Natl. Sci. Rev.上发表论文

作者：

Yongji Wang¹, Wei Deng¹*, Xinmin Shi², Xiaobin Ren¹, Bingbing Li¹, Yuan Li³, Jiansheng Jie¹, Xiujuan Zhang¹* & Xiaohong Zhang¹*

单位：

¹Institute of Functional Nano & Soft Materials (FUNSOM), State Key Laboratory of Bioin spired Interfacial Materials Science, Soochow University, Suzhou 215123, China

²Macao Institute of Materials Science and Engineering (MIMSE) MUST-SUDA, Joint Research Center for Advanced Functional Materials, Macau University of Science and Technology Taipa, Macau 999078, China

³School of Information Science and Engineering, Shandong University, Qingdao 266237, China

摘要：

Achieving high-quality electrical contact at metal/organic semiconductor interfaces is crucial for unlocking the full potential of single-crystal organic thin-film transistors (SC OTFTs). However, the delicate nature of organic single-crystal line films (OSCFs) and the harsh metal deposition process often introduce trap states at the interface, limiting SC-OTFT performance. Here, we present a transparent electrical contact concept that leverages the in situ spontaneous reaction of fluorinated thiol molecules with the electrode, enhancing the buried metal/OSCF contacts. This method significantly lowers the Schottky barrier height by 73.3%and mitigates the Fermi-level pinning effect, resulting in over a 16-fold reduction in contact resistance. As a result, 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) OTFTs achieve a high average reliable mobility ( μr ) of 13.2 cm² V⁻¹ s⁻¹ and a reliability factor up to 89%, surpassing previously reported values. Device simulations indicate that the concentration of tail and deep states is nearly two orders of magnitude lower than that of free states contributing to charge transport, suggesting near-ideal trap-free charge transport. These findings position our molecular contact upgrading method as a promising technology for advancing organic electronics.

影响因子：

17.1

分区情况：

一区

链接：

https://doi.org/10.1093/nsr/nwaf207