题目： | Surficial Homogenic Effect Enables Highly Stable Deep-Blue Perovskite Light-Emitting Diodes |
作者： | Yu-Han Li1#, Yu Xia1#, Chun-Hao Chen1, Run-Jun Jin1, Aleyna Nar2, Jing Chen1, Nan Li1, Kai-Li Wang1, Ilhan Yavuz2*, and Zhao-Kui Wang1* |
单位： | 1Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, China. 2Department of Physics, Marmara University, Ziverbey, Kadikoy, Istanbul 34722, Türkiye. |
摘要： | The device performance of deep-blue perovskite light-emitting diodes (PeLEDs) is primarily constrained by low external quantum efficiency (EQE) especially poor operational stability. Herein, we develop a facile strategy to improve deep-blue emission through rational interface engineering. We innovatively reported the novel electron transport material, 4,6-Tris(4-(diphenylphosphoryl)phenyl)-1,3,5-triazine (P-POT2T), and utilized a sequential wet-dry deposition method to form the homogenic gradient interface between electron transport layer (ETL) and perovskite surface. Unlike previous reports that achieved carrier injection balance by inserting new interlayers, our strategy not only passivated uncoordinated Pb2+ in the perovskite via P=O functional groups but also reduced interfacial carrier recombination without introducing new interfaces. Additionally, this strategy enhanced the interface contact between the perovskite and ETL, significantly boosting device stability. Consequently, the fabricated deep-blue PeLEDs delivered an EQE exceeding 5% (@460 nm) with an exceptional halftime extended to 31.3 minutes. This straightforward approach offers a new strategy to realize highly efficient especially stable PeLEDs. |
影响因子： | 16.1 |
分区情况： | 一区 |
链接： | https://doi.org/10.1002/anie.202412915 责任编辑：杜欣 |