题目： | Dual-Functional Self-Assembled Molecule Enabling High-Performance Deep-Blue Perovskite Light-Emitting Diodes |
作者： | Nan Li1, Yu Xia1, Yan-Hui Lou2*, Yu-Han Li1, Run-Jun Jin1, Xiao-Ying He1, Chun-Hao Chen1, Jing Chen1, Kai-Li Wang1, Zhao-Kui Wang1* |
单位： | 1Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, China. 2College of Energy, Soochow Institute for Energy and Materials Innovations, Soochow University, Suzhou 215006, China. |
摘要： | Great efforts have been made to improve the composition and structure of perovskite light-emitting diodes (PeLEDs) through methods such as dimensional reduction or halide engineering, thereby reducing non-radiative recombination. However, deep-blue PeLEDs still face a deep valence band issue. The mismatched energy level alignment between the perovskite and the hole transport layer (HTL) leads to charge accumulation, resulting in imbalanced carrier transport and injection. Herein, to address the issues of imbalanced carrier injection and defect states in PeLEDs, a deep-blue perovskite emitter using [4-(3,6-Dimethyl-9H-carbazol-9-yl)butyl]phosphonic acid (Me-4PACz) as the material to promote hole transport and passivate defects is presented. The stepwise energy level structure design can effectively reduce the hole injection barrier and improve the carrier injection efficiency. Additionally, the electron-rich P═O bond can effectively passivate the unsaturated Pb2+ in perovskite, reducing non-radiative recombination caused by defects. Ultimately, stable deep-blue PeLEDs (≈458 nm) are successfully fabricated with an external quantum efficiency (EQE) of 4.33%. This study provides new insights into the application of self-assembled monolayers (SAMs) in PeLEDs. |
影响因子： | 18.5 |
分区情况： | 一区 |
链接： | https://doi.org/10.1002/adfm.202411227 责任编辑：杜欣 |