题目： | Redefining PbS Quantum Dot Photovoltaics: p-i-n Devices with Superior Efficiency and Reproducibility |
作者： | Can Gao1, Juncheng Zhu1, Xiaobo Ding1, Kunyuan Lu1*, Xin Wen1, Lin Yuan1, Yang Li1, Leliang Song1, Yu Yin1, Guozheng Shi1,2, Yuran Xiao1, Lizhen Huang1, Qing Shen2, Zeke Liu1,3*, and Wanli Ma1,3* |
单位： | 1Institute of Functional Nano & Soft Materials (FUNSOM)Joint International Research Laboratory of Carbon-Based FunctionalMaterials and DevicesSoochow UniversitySuzhou, Jiangsu 215123, PR China. 2Faculty of Informatics and EngineeringThe University of Electro-CommunicationsTokyo 182-8585, Japan. 3Jiangsu Key Laboratory of Advanced Negative Carbon TechnologiesSoochow University Suzhou, Jiangsu 215123, PR China. |
摘要： | Developing diverse photovoltaic device architectures is essential not only for improving power conversion efficiency (PCE) but also for enabling seamless integration with other photovoltaic materials in high-performance tandem configurations. While n-i-p architectures have historically dominated the development of PbS colloidal quantum dots (CQDs) solar cells, p-i-n counterparts have significantly lagged behind in efficiency, limiting their potential for further advancement. In this work, the advantage of the surface tunability of CQDs is taken by anchoring the classical self-assembled monolayer (SAM) molecule MeO-2PACz onto PbS CQDs via ligand exchange, forming a PbS-SAM bridging-layer, which is inserted between NiOx/SAM and the CQD active layer, resulting in a NiOx/SAM/PbS-SAM composite hole transporting layer (HTL). This structure effectively passivates the buried interfacial traps and enhances hole extraction. As a result, a record PCE approaching 14% is achieved, with a certified value of 13.62%, which is not only largely surpassing the previous highest value of 9.70% for p-i-n PbS QD solar cells, but also exceeds the current PCE record set by n-i-p architectures. Moreover, the p-i-n configuration exhibits excellent reproducibility, providing a robust and scalable platform for future applications, particularly as a narrow-bandgap subcell in monolithic tandem devices with wide-bandgap materials such as perovskites. |
影响因子： | 27.4 |
分区情况： | 一区 |
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责任编辑：郭佳