题目： | Silicon/Organic Heterojunction for Photoelectrochemical Energy Conversion Photoanode with a Record Photovoltage |
作者： | LeiWei Cui, Shan Wu, Fengjiao Chen, Zhouhui Xia, Yanguang Li, Xiao-Hong Zhang, Tao Song,* Shuit-Tong Lee, and Baoquan Sun* |
单位： | †Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, 199 Ren’ai Road, Suzhou, Jiangsu 215123, China |
摘要： | Silicon (Si)is a good photon absorption material for photoelectron- chemical (PEC) conversion. Recently, the relatively low photovoltage of Si-based PEC anode is one of the most significant factors limiting its performance. To achieve a high photovoltage in PEC electrode, both a large barrier height and high-quality surface passivation of Si are indispensable. However, it is still challenging to induce a large band bending and passivate Si surface simultaneously in Si- based PEC photoanodes so far, which hinders their performance. Here, we develop a simple Si/poly(3,4-ethylenedioxythiophene): polystyrenesulfonate (PEDOT:PSS) heterojunction with large band banding and excellent surface passiviation for efficient PEC conversion. A chemically modified PEDOT:PSS film acts as both a surface passiviation layer and an effective catalyst simultaneously without sacrificing band bending level. A record photovoltage for Si-based PEC photoanodes as high as 657 mV is achieved via optimizing the PEDOT:PSS film fabrication process. The density of electron state (DOS) measurement is utilized to probe the passivation quality of the organic/inorganic heterojunction, and a low DOS is found in the Si/PEDOT:PSS heterojunction, which is in accordance with the photovoltage results. The low-temperature solution-processed Si/organic heterojunction photoanode provides a high photovoltage, exhibiting the potential to be the next-generation economical photoanode in PEC applications. |
影响因子： | 13.344 |
分区情况： | 1区 |
链接： | http://pubs.acs.org/doi/pdf/10.1021/acsnano.6b04385 责任编辑：向丹婷 |