揭建胜教授和张秀娟教授课题组合作在ACS Nano上发表文章

题目：

High-Responsivity, High-Detectivity, Ultrafast Topological Insulator Bi2Se3/Silicon Heterostructure Broadband Photodetectors

作者：

Hongbin Zhang, Xiujuan Zhang,* Chang  Liu, Shuit-Tong Lee, and Jiansheng Jie*

单位：

摘要：

As  an exotic state of quantum matter, topological insulators have promising  applications in new-generation electronic and optoelectronic devices. The  realization of these applications relies critically on the preparation and properties understanding of high-quality topological insulators, which however are mainly fabricated by high-cost methods like molecular beam epitaxy. We here report the successful preparation of high-quality topological insulator Bi₂Se₃/Si heterostructure having an atomically abrupt  interface by van der Waals epitaxy growth of Bi₂Se₃ films on Si wafer. A simple, low-cost physical vapor deposition (PVD) method was employed to achieve the growth of the Bi₂Se₃ films. The Bi2Se3/Si heterostructure exhibited excellent diode characteristics with a pronounced photoresponse under light illumination. The built-in potential at the Bi₂Se₃/Si interface greatly facilitated the separation and transport of photogenerated carriers, enabling the photodetector to have a high light responsivity of 24.28 A W⁻¹, a  high detectivity of 4.39 × 10¹² Jones (Jones = cm Hz^1/2  W⁻¹), and a fast response speed of aproximately microseconds. These device parameters represent the highest values for topological insulator-based photodetectors. Additionally, the photodetector possessed broadband detection ranging from ultraviolet to optical telecommunication wavelengths. Given the simple device architecture and compatibility with silicon technology, the  topological insulator Bi₂Se₃/Si heterostructure holds  great promise for high-performance electronic and optoelectronic  applications.

影响因子：

13.344

分区情况：

1区

链接：

http://pubs.acs.org/doi/pdf/10.1021/acsnano.6b00272

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