题目： | Surface Charge Transfer Doping via Transition Metal Oxides for Efficient p-Type Doping of II–VI Nanostructures |
作者： | Feifei Xia,†,⊥ Zhibin Shao,†,⊥ Yuanyuan He,†,‡ Rongbin Wang,†,§ Xiaofeng Wu,† Tianhao Jiang,† Steffen Duhm,† Jianwei Zhao,‡ Shuit-Tong Lee,† and Jiansheng Jie*,† |
单位： | †Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials &Devices, Soochow University, Suzhou 215123, Jiangsu, People’s Republic of China ‡Materials and Textile Engineering College, Jiaxing University, Jiaxing 314001, Zhejiang People’s Republic of China §Institut für Physik, Humboldt-Universitaẗ zu Berlin, 12489 Berlin, Germany |
摘要： | Wide band gap II−VI nanostructures are important building blocks for new-generation electronic and optoelectronic devices. However, the difficulty of realizing p-type conductivity in these materials via conventional doping methods has severely handicapped the fabrication of p−n homojunctions and complementary circuits, which are the fundamental components for high-performance devices. Herein, by using first-principles density functional theory calculations, we demonstrated a simple yet efficient way to achieve controlled p-type doping on II−VI nanostructures via surface charge transfer doping (SCTD)using high work function transition metal oxides such as MoO3, WO3, CrO3, and V2O5 as dopants. Our calculations revealed that these oxides were capable of drawing electrons from II−VI nanostructures, leading to accumulation of positive charges (holes injection) in the II−VI nanostructures. As a result, Fermi levels of the II−VI nanostructures were shifted toward the valence band regions after surface modifications, along with the large enhancement of work functions. In situ ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy characterizations verified the significant interfacial charge transfer between II−VI nanostructures and surface dopants. Both theoretical calculations and electrical transfer measurements on the II−VI nanostructure-based field-effect transistors clearly showed the p-type conductivity of the nanostructures after surface modifications. Strikingly, II−VI nanowires could undergo semiconductor-to-metal transition by further increasing the SCTD level. SCTD offers the possibility to create a variety of electronic and optoelectronic devices from the II−VI nanostructures via realization of complementary doping. |
影响因子： | 13.344 |
分区情况： | 1区 |
链接： | http://pubs.acs.org/doi/pdf/10.1021/acsnano.6b05884 责任编辑：向丹婷 |