揭建胜教授与张秀娟教授合作在Adv. Mater.上发表论文

作者：

Jinwen Wang^2#, Zheng Ren^2#, Tingyi Yan^2#, Ruofei Jia², Yanyan Cheng¹, Xiujuan Zhang²*, Jiansheng Jie^1,2*

单位：

¹Macao Institute of Materials Science and Engineering (MIMSE), MUST-SUDA Joint Research Center for Advanced Functional Materials, Macau University of Science and Technology, Taipa, Macau 999078, P. R. China

²State Key Laboratory of Bioinspired Interfacial Materials Science, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123, P. R., China

摘要：

Bilayer organic semiconductor single crystals (OSSCs) have emerged as a highly promising material platform for the development of flexible organic electronic devices, owing to their exceptional mechanical flexibility and superior charge transport properties. However, in situ growth of bilayer OSSCs on polymer dielectric is greatly hindered by dielectric surface defects and strong molecular interaction between dielectric and organic semiconductor. Here, a floating epitaxy and stitching growth strategy is developed for large-area growth of bilayer OSSCs on polymer dielectric. By exploiting surface-tension-controlled nucleation behaviors of organic molecules, the preferential formation of organic seed crystals is achieved at saturated solution-air interface, thereby eliminating the adverse effects of polymer dielectric on nucleation and growth of OSSCs. Furthermore, the unique stitching growth mode of the crystals during epitaxial process ensures large-area bilayer OSSCs formation. Using this approach, we successfully fabricate sub-centimeter-sized bilayer 2,9-didecyldinaphtho[2,3-b:2’,3’-f]thieno[3,2-b]thiophene crystals on polymer dielectric. Notably, organic field-effect transistors (OFETs) based on the crystals retain a high carrier mobility up to 15.1 cm²/Vs even after undergoing 3000 bending cycles at an ultra-small bending radius of 40 µm, outperforming most existing flexible OFETs. This work opens a new avenue for large-area growth of bilayer OSSCs on polymer dielectrics toward high-performance, ultra-flexible transistors.

影响因子：

26.8

分区情况：

一区

链接：

https://doi.org/10.1002/adma.202515477