题目： | Ultrahigh Speed and Broadband Few-Layer MoTe2/Si 2D-3D Heterojunction-Based Photodiodes Fabricated by Pulsed Laser Deposition |
作者： | Zhijian Lu,1 Yan Xu,1 Yongqiang Yu,1,* Kewei Xu,1 Jie Mao,2 Gaobin Xu,1 Yuanming Ma,1 Di Wu,3 and Jiansheng Jie2,* |
单位： | 1School of Electrical Science and Applied Physics, Micro Electromechanical System Research Center of Engineering and Technology of Anhui Province, Hefei University of Technology, Hefei, Anhui 230009, P. R. China. 2Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, P. R. China. 3School of Physics and Microelectronics, Key Laboratory of Material Physics of Ministry of Education, Zhengzhou University, Zhengzhou, Henan 450052, P. R. China. |
摘要： | 2D transition metal dichalcogenides are promising candidates for high-performance photodetectors. However, the relatively low response speed as well as the complex transfer process hinders their wide applications. Herein, for the first time, the fabrication of a few-layer MoTe2/Si 2D-3D vertical heterojunction for high-speed and broadband photodiodes by a pulsed laser deposition technique is reported. Owing to the high junction quality, ultrathin MoTe2 film thickness, and unique vertical n-n heterojunction structure, the photodiode exhibits excellent device performance in terms of a high responsivity of 0.19 A W-1 and a large detectivity of 6.8×1013 Jones. The device is also capable of detecting a broadband light with wavelength spanning from 300 to 1800nm. More importantly, the device possesses an ultrahigh response speed up to 150 ns with a 3-dB electrical bandwidth approaching 0.12GHz. This work paves the way toward the fabrication of novel 2D-3D heterojunctions for high-performance, ultrafast photodetectors. |
影响因子： | 15.621 |
分区情况： | 一区 |
链接： | https://onlinelibrary.wiley.com/doi/10.1002/adfm.201907951 责任编辑：向丹婷 |